SiGe deposition technology dates back roughly 25-30 years.  Look for references
in the 1980s by:

Bernie Meyerson from IBM
John Bean from Bell Labs
Jim Sturm (now at Princeton), Cliff King (was at Bell Labs/Lucent/Agere), Judy
Hoyt (now at MIT), and Jim Gibbons from Stanford

Building on the work by Meyerson and colleagues, IBM developed SiGe bipolar
transistor technology.  Gibbons and colleagues developed SiGe MOS technology,
which was then picked up and enhanced by Intel and others.

The technology to grow high-quality SiGe on Si is not trivial.  Simply etching
native oxide in HF, then going into an epi reactor, typically will not work;
oxide always grows quickly on Si, and will have to be reduced in situ before a
quality film can be deposited.

---
Albert K. Henning, PhD
Director of MEMS Technology
NanoInk, Inc.
215 E. Hacienda Avenue
Campbell, CA  95008
408-379-9069  ext 101
ahenning@nanoink.net

-----Original Message-----
From: Andrea Mazzolari [mailto:mazzolari@fe.infn.it]
Sent: Wednesday, February 17, 2010 6:53 AM
To: General MEMS discussion
Subject: [mems-talk] SiGe deposition

Hi all,

i need to grow by epitaxy SiGe and Ge on Si (100).
I'm very new to this.

1) May someone suggest milestone papers in this field ?

2) is it needed to "prepare" the si surface before deposition ? In
particular i guess it is needed to remove native oxide by hf. Are other
operations needed to prepare the Si surface ?

Thanks,
Andrea