Cal-Berkeley has done work with poly-SiGe / Ge for low temperature (CMOS compatible) surface micromachining. See references by: A. Franke R. Howe Stafford Johnson MEMSCAP, Inc. -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of Albert Henning Sent: Wednesday, February 17, 2010 4:12 PM To: mazzolari@fe.infn.it; General MEMS discussion Subject: Re: [mems-talk] SiGe deposition SiGe deposition technology dates back roughly 25-30 years. Look for references in the 1980s by: Bernie Meyerson from IBM John Bean from Bell Labs Jim Sturm (now at Princeton), Cliff King (was at Bell Labs/Lucent/Agere), Judy Hoyt (now at MIT), and Jim Gibbons from Stanford Building on the work by Meyerson and colleagues, IBM developed SiGe bipolar transistor technology. Gibbons and colleagues developed SiGe MOS technology, which was then picked up and enhanced by Intel and others. The technology to grow high-quality SiGe on Si is not trivial. Simply etching native oxide in HF, then going into an epi reactor, typically will not work; oxide always grows quickly on Si, and will have to be reduced in situ before a quality film can be deposited. --- Albert K. Henning, PhD