Dear Kagan,

In my experience, the use of thermally grown oxide does stand well as etch
mask for both TMAH . The oxide etch rate is ~2A/min for TMAH @80C. Thermally
grown >3000 A oxide is sufficient as etch mask to etch for 500 um
Si substrate of SOI.

Regards
Om

On Thu, May 6, 2010 at 3:44 AM, Kagan Topalli 
wrote:

> Hi,
>
> PECVD nitride and oxides cannot withstand several hours of KOH or TMAH
> etching. LPCVD nitride or thermally grown oxide might be the choices for
> masking KOH or TMAH etching.
>
> Regards.
>
> --
> Kagan Topalli
> Postdoctoral Researcher
> ElectroScience Laboratory
> The Ohio State University
> 1320 Kinnear Road
> Columbus, Ohio 43212
> http://www.electroscience.osu.edu/
> e-mail: topalli.1@osu.edu

--
Om Krishna Suwal
PhD Student
Department of Nano-Science
Sun Moon University,
Research lab- # 104 dong, Interuniversity Semiconductor Research Center,
SNU, Shillim Dong, Gwanak Gu,Seoul,151-742 Korea
Cellular phone: +82 10 2892 8185