Hi,

I am trying to bond a pyrex wafer to another 4 inch pyrex wafer by
anodic bonding.  For that I use an amorphous silicon deposited by PECVD
as intermediate layer (less than 1 µm thickness) or polysilicon deposited
by LPCVD.  The parameters which I use are: 450°C on both wafers, 1200 V
and 200N, but in both case I don't have a good bonding. if you have any
suggestions, they will be welcome.

best,

Alaa

--
Alaa el dine ALLOUCH
Doctorant au LAAS-CNRS-Groupe N2IS
7 Av colonel Roche, 31077 Toulouse
Tél : 05 61 33 78 71