durusmail: mems-talk: direct patterning/fabrication on existing SiN membrane
direct patterning/fabrication on existing SiN membrane
2010-07-21
2010-07-22
2010-07-22
direct patterning/fabrication on existing SiN membrane
Aaron Datesman
2010-07-22
Xiaoyong -

We have had some success sputter depositing a thick layer of Al (400nm)
on the back side of the wafer to support the membrane from underneath
during subsequent processing. The Al is subsequently removed with a wet
etch.

Cheers!
Aaron Datesman

Xiaoyong Liu wrote:
> Hi,
>    I am in the process of fabrication of some patterning  on SiN membrane
window. It involves of lithography, film deposition and liftoff. Since membrane
is so fragile(the thickness is about less or around 100nm), it is very easy to
break during lift off/ cleaning process which may require sonication, some times
even N2 blow dry may damage membrane window.  I am wondering if anyone have
experience of how to handle it and share it with me.
>
> Thanks
>
> Xiaoyong

--
Dr. Aaron Datesman
Post-Doctoral Research Associate
Materials Science Division
Argonne National Laboratory
9700 S. Cass Avenue
Bldg. 223, B-217
Argonne, IL 60439

630-252-9154 (office)
630-252-7777 (fax)
773-899-1095 (cell)
datesman@anl.gov

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