The final thickness is 40-60A and develop within hours for 100 wafers up to 1 day for 111 wafers. -----Original Message----- From: mems-talk-bounces+shay=mizur.com@memsnet.org [mailto:mems-talk-bounces+shay=mizur.com@memsnet.org] On Behalf Of Ned Flanders Sent: Wednesday, September 15, 2010 10:15 PM To: General MEMS discussion Subject: [mems-talk] native Si oxide thickness vs. time Hi all, say you dip awafer in HF/BHF for a few seconds, pull it out, rins with DI water and start your stopwatch (t=0). How quickly will the native oxide layer grow at nominal conditions (room temp, 1 atm)? How thick will it be after 1 day, 1 week, 1 year... etc? Any info would be very interesting. Thanks a lot.