Thanks.

Do you know the electrical/tunneling properties of such thin SiO2
layer? I imagine that tunneling should happen very easily, but I don't
know of any study in this regard.

Would this final thickness be the same, regardless of doping (type and
level) and orientation?

On 9/15/10, shay kaplan  wrote:
> The final thickness is 40-60A and develop within hours for 100 wafers up to
> 1 day for 111 wafers.
>
>
> -----Original Message-----
> From: mems-talk-bounces+shay=mizur.com@memsnet.org
> [mailto:mems-talk-bounces+shay=mizur.com@memsnet.org] On Behalf Of Ned
> Flanders
> Sent: Wednesday, September 15, 2010 10:15 PM
> To: General MEMS discussion
> Subject: [mems-talk] native Si oxide thickness vs. time
>
> Hi all,
>
> say you dip a  wafer in HF/BHF for a few seconds, pull it out,
> rins with DI water and start your stopwatch (t=0). How quickly will
> the native oxide layer grow at nominal conditions (room temp, 1 atm)?
> How thick will it be after 1 day, 1 week, 1 year... etc?
>
> Any info would be very interesting. Thanks a lot.