durusmail: mems-talk: removal of HMDS without affecting the photoresist
removal of HMDS without affecting the photoresist
2010-10-20
2010-10-21
2010-10-21
2010-10-21
2010-10-22
2010-10-21
2010-10-21
2010-10-26
removal of HMDS without affecting the photoresist
Bill Moffat
2010-10-26
Agree with Bill Flounders.  The 5 angstrom monolayer created by the HMDS
reaction is removed by any reasonably harsh organic remover.  Oxygen
plasma, Piranha, sulphuric acid and or sulphonic acids.

Bill
Yield Engineering Systems.

-----Original Message-----
From: mems-talk-bounces+bmoffat=yieldengineering.com@memsnet.org
[mailto:mems-talk-bounces+bmoffat=yieldengineering.com@memsnet.org] On
Behalf Of Bill Flounders
Sent: Thursday, October 21, 2010 9:03 AM
To: General MEMS discussion
Cc: Shay Kaplan
Subject: Re: [mems-talk] removal of HMDS without affecting the
photoresist

After developing the photoresist, a brief O2 plasma treatment will
remove any residual HMDS if there is even any remaining after
development.

The best tests to verify these effects would be to measure contact angle
of your surface prior to HMDS coat, after HMDS coat, then PR coat, flood
expose, develop - then test contact angle again.
Brief O2 plasma and test contact angle one more time.

This should give you all the info you need to verify your process.

I expect Bill Moffatt at Yield Engineering may weigh in on this also.

Sincerely,
Bill Flounders
Berkeley NanoLab
reply