Hello everyone, I am planning to perform some KOH anisotropic wet etching of silicon to create V-grooves with ~ 1 um width, and for that I am wondering if I may use sputtered oxide as the etch mask. I have seen a lot of papers using thermal oxide but I would like to see if sputtered oxide would work as well, since I have easy access to a sputtering station. Any advice would be very much appreciated! Thank you in advance, JJ