Hi Panchal,
I am assuming that SiN deposited (either LPCVD or PECVD)  is good film. If the
SiN film is good then one thing will matter most to the adhesion of the Ni to
the SiN film..

Surface cleaning before deposition: which you can do by using plasma etching or
ion etching on the surface before deposition, in that case you do not need to
clean the oxide prior to putting your substrate into the dep chamber.  It also
make the surface rougher to adhere the Ni onto substrate.

Hope, it resolve your challenge!

Parshant


-----Original Message-----
From: André Bödecker [mailto:aboedecker@imsas.uni-bremen.de]
Sent: Wednesday, December 09, 2015 12:41 AM
To: 'bhargav panchal' ; 'General MEMS discussion'

Subject: Re: [mems-talk] Silicon Carbide Issue

Hello,

if a poor adhesion is the problem, I would suggest to use a metallic adhesion
layer like chromium or titanium.

Regards,
André

-----Ursprüngliche Nachricht-----
Von: mems-talk-bounces+aboedecker=imsas.uni-bremen.de@memsnet.org
[mailto:mems-talk-bounces+aboedecker=imsas.uni-bremen.de@memsnet.org] Im Auftrag
von bhargav panchal
Gesendet: Sonntag, 29. November 2015 18:01
An: General MEMS Discussion
Betreff: [mems-talk] Silicon Carbide Issue

We have problem regarding nickle deposition on Silicon nitride by sputtering.
Prior to deposition we have removed the oxides from the surface.
Please suggest possible solution.

Have a good day everyone.

Regards, Bhargav Panchal+91 9742712671
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