Yuan,
     Quick comparison, in the old days a problem with any plasma was that it
created fast moving electrons.  These would diffuse into the circuit being
cleaned and create a shift in electrical parameters.  In the case of mos it
could cause a short and ruin the operation of the device.  Ozone does not
produce any electrons.  It is on the down side very slow and limited to one gas
obviously.  With down stream plasma the level of electron damage is reduced
considerably and with charge grounding electrons are removed totally from the
plasma.  This allows the use of any gas and a far more aggressive organic
remover in the case of Oxygen plasma.  A simple comparison of 2 wafer resist
strippers 1) Oxygen plasma wafer temperature 150 degrees C 10,000 Angstroms of
resist removed in 35 seconds. 2) Ozone resist stripper at 350 degrees C 10,000
Angstroms of resist removed in 3.5 minutes.  As the action is a simple chemical
action and temperature accelerates it you can see the Ozone is less aggressive.

-----Original Message-----
From: X. Yuan [mailto:xyuann@yahoo.com]
Sent: Wednesday, October 09, 2002 2:36 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] UV-ozone versus O2 plasma


Hi,

I am trying to find some information about
UV-ozone clean in the area of semiconductor
fabrication. Specifically, I am interested
in the comparision between UV-ozone clean
and O2 plasma clean. Is there any advantage
of ozone? I really couldn't find any useful
information on the web. Could anyone provide
anything that I can start with? Thanks much.

Yuan


__________________________________________________
Do you Yahoo!?
Faith Hill - Exclusive Performances, Videos & More
http://faith.yahoo.com

_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/