Kirt,
      Short comparison U.V. Ozone has no electrons which means no C.V. shift in
treated devices.  It is slower, less active and is limited to one gas.  Direct
comparison of a single wafer down stream Oxygen stripper to an Ozone single
wafer stripper. Both using 10,000 Angstrom resist thickness.  Oxygen 30 seconds
at 150 degrees C. Ozone 3minutes 30 seconds at 350 degrees C.  As the action is
like any chemical reaction and goes faster with higher temperature you can see
the Oxygen plasma is far more active.  You have the added advantage of using
other gasses in the plasma system.  O2+CF4 or SF6 makes the action far faster.
The addition of Hydrogen is common for a reducing gas on copper to remove
metallic oxides.  NH3, He, N2, are all common experimental gasses that can be
used in most commercial plasma units with no problems.  The modern down stream
charge grounded plasma systems offer no electron plasma and alternative gas
possibilities.  Is there any advantage to Ozone I do not think so.  Please
contact me by email or by phone 408 954 8353 for more details.  Bill Moffat.

-----Original Message-----
From: kirt_williams@agilent.com [mailto:kirt_williams@agilent.com]
Sent: Thursday, October 10, 2002 9:17 AM
To: mems-talk@memsnet.org
Subject: RE: [mems-talk] UV-ozone versus O2 plasma


> I am trying to find some information about
> UV-ozone clean in the area of semiconductor
> fabrication. Specifically, I am interested
> in the comparision between UV-ozone clean
> and O2 plasma clean. Is there any advantage
> of ozone? I really couldn't find any useful
> information on the web. Could anyone provide
> anything that I can start with? Thanks much.

Advantage of ozone: no ion bombardment, which can damage some electronic devices
Disadvantage of ozone: for our systems at least, it is much slower than an
oxygen plasma

        --Kirt Williams Agilent Technologies

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