Swiss,

NJIT Prof. K. Farmer et. al. has used thin silicon wafers for wafer bonding.
Two references I used are as follows:

"Bondability and Surface Roughness of Ultra-thin Single Crystal Silicon
Wafers," M. Beggans, K. Farmer, J. Federici, T. G. Digges, Jr., S.
Garoflini, D. Hensley, Electrochemical Society Proceedings Volume 97-36, p.
64.

"Optical Pressure Sensor Head Fabrication using Ultra-thin Silicon Wafer
Anodic Bonding," M Beggans, D. Ivanov, S. Fu, T. Diggs, Jr., K. Farmer,
Proceedings of SPIE 1999 International Symposium on Design, Test and
Microfabrication of MEMS and MOEMS, Paris France, Volume 3680, p. 773.

Hope this helps,

Loren.

 -----Original Message-----
From:   Swiss Zhang [mailto:janeswiss2000@hotmail.com]
Sent:   Tuesday, October 15, 2002 4:56 PM
To:     mems-talk@memsnet.org
Subject:        [mems-talk] How to handle the thin Si wafer of 10-um thick

Hello,

Has anybody had the experience with handling 10-um thin wafer? I want to
deposit Cr/Au layer using E-beam evaporator. I am afraid it will break the
wafer during evaporation due to high temperature and stress. Does anybody
know if it works Ok? And also I think I better bond the thin wafer to
another standard 500um wafer together, but i don't know what kind of
adhesive materials can resist high temperature in E-beam evaporator.

Thanks for your suggestion.

Swiss

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