Swiss,
You will definitely need to have the thin Silicon supported, as it will not be
mechanically stable at this thickness for the area of a 6" wafer.  I doubt 10
micron thick silicon 4" in diameter will survive as a free standing wafer
either.
You really do not need a very high temperature bonding agent to survive a PVD
evaporation of Cr/Au, depending upon the thickness of the film (or rather the
duration of the deposition).  Of course it has to be vacuum compatible.
Neal
 Swiss Zhang  wrote:Hello,

Has anybody had the experience with handling 10-um thin wafer? I want to
deposit Cr/Au layer using E-beam evaporator. I am afraid it will break the
wafer during evaporation due to high temperature and stress. Does anybody
know if it works Ok? And also I think I better bond the thin wafer to
another standard 500um wafer together, but i don't know what kind of
adhesive materials can resist high temperature in E-beam evaporator.

Thanks for your suggestion.

Swiss

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