Dear all,

I used S1813 as the mask for the DRIE of the top layer from the front-side.
Then I put the chip upside down, attached it to an Oxide wafer and did
another DRIE of the substrate from the back-side . After the etch, I found
it difficult to remove the polymer formed during the etch. I dip my chips
in Aceton for 10 mins and then used Oxygen plasmer to clean it. However,
the top layer(device layer) of my chips were still not clean enough. Could
anybody give me some suggestions on how to completely clean the chips after
these two DRIE process? Thanks very much.

--
Da-xiang Zhou
PhD candidate
Semiconductor Physics Group
Cavendish Laboratory
University of Cambridge