The passivation film on the side walls is very hard to remove, I don't know yet
how to do that. If you end the DRIE process by an etching period, the
passivation film should be removed on the horizontal surfaces.


To remove the photoresist after DRIE I put the sample in a bath of nanoremover,
75°C, over night and than in O2 plasma, 150-175W/10-15min.


I'm not sure if the nanoremover is really needed.

_______________________________

Selon Florian Herrault :
> You could try Piranha cleaning too.
>
> Quoting "D. Zhou" :
>
> > Dear all,
> >
> > I used S1813 as the mask for the DRIE of the top layer from the front-side.
> > Then I put the chip upside down, attached it to an Oxide wafer and did
> > another DRIE of the substrate from the back-side . After the etch, I found
> > it difficult to remove the polymer formed during the etch. I dip my chips
> > in Aceton for 10 mins and then used Oxygen plasmer to clean it. However,
> > the top layer(device layer) of my chips were still not clean enough. Could
> > anybody give me some suggestions on how to completely clean the chips after
> > these two DRIE process? Thanks very much.