There should not be - 20nm of SiO2 isn't much more than native oxide
anyway.

Best Regards,
Chad Brubaker

EV Group
invent * innovate * implement
Senior Process Technology Engineer - Direct: +1 (480) 305 2414, Main: +1
(480) 305 2400 Fax: +1 (480) 305 2401
Cell: +1 (602) 321 6071
E-Mail: C.Brubaker@EVGroup.com, Web: www.EVGroup.com

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of li shifeng
Sent: Thursday, September 18, 2008 11:32 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] glass and coated thin film silicon anodic wafer
bonding

Hi, colleagues,

I want to bond glass and silicon wafer using anodic bonding. The silicon
wafer is coated with 20nm SiO2/20nm a-Si/20nm SiO2 stack film. The glass
wafer is etched channels with 100nm width and 50 nm depth. I am
wondering if there are any problems to bond them.