You're right, of course.  Its 10 - 15 A. I slipped a decimal (I was
thinking 15 nm).

 However, an anodic bond may still be possible. 20nm is still not much
of an anti diffusion layer (or else a silicon chemical migration layer -
i.e. the driving force encourages a silicon from the surface SiO2 to
transfer bond, causing a silicon from an SiO2 in the next layer down to
switch...)

Best Regards,
Chad Brubaker

EV Group
invent * innovate * implement
Senior Process Technology Engineer - Direct: +1 (480) 305 2414, Main: +1
(480) 305 2400 Fax: +1 (480) 305 2401
Cell: +1 (602) 321 6071
E-Mail: C.Brubaker@EVGroup.com, Web: www.EVGroup.com

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of Kuijpers, P e m
Sent: Thursday, September 18, 2008 10:36 PM
To: General MEMS discussion
Cc: Brubaker Chad
Subject: Re: [mems-talk] glass and coated thin film silicon anodic wafer bonding

Hi,

Isn't native oxide something about 12A (1.2 nm) thick??

Peter Kuijpers
mailto:p.e.m.kuijpers@philips.com