Simpler than that.  HMDS reacts with exposed positive resist.  The acid
in the exposed resist acts as a catalyst.  The HMDS reaction liberates
NH3 and CO2 leaving behind a Si(CH3)3 Silicon Tri-methyl.  This is a
silicon rich layer that can inhibit diffusion into the resist and
Thermal flow.  If you can use a true silylation unit that diffuses HMDS
into the resist.  A higher pressure vapor, 200 to 600 Torr instead of 14
Torr there is a deeper more consistent layer.  If you can get a true low
pressure plasma system then an Oxygen plasma at 5 millitorr will convert
the silicon to silicon dioxide and you have a completely impervious
barrier.  Bill Moffat

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of basar bolukbas
Sent: Thursday, January 29, 2009 10:11 PM
To: mems litho
Subject: Re: [mems-talk] Double lithography problem with SU1828-TI35ES

Hello Bill,

Thank you very much for your answer.

What you mean you said ''Silylate''.
How can i set to Silicon barrier? Do you you mean SiN deposition?
If so i can deposite with PECVD-Sputtering.