Dear all,

I have deep channels (around a hundred microns) on the silicon substrate. and
during the anodic bonding of silicon and glass, they bonded well but the
glass cracked. Maybe it is the stress around the channels walls which caused
cracking. The voltage I am using now is 500 w, and the temperature goes to
400 deg c.  Does anyone have similar experience? How to avoid this?

Thank you very much.

Best Regards,
Jingru