Dear Ashwini,

I have previously etched some silicon wafer using DRIE in a STS tool
with some metal exposed just at the end of the etching, perhaps about 1
min. I always performed a cleaning just after this step (O2 plasma and
sometimes manually) and we have never reported any difference.

I have also seen people using aluminium as a hard mask for DRIE ...

Regards,

Alex

ashwini jambhalikar a écrit :
> Dear Friends,
>
> I had some questions related to  PhotoResist ashing using DRIE chamber.
>
> We have STS ASE DRIE.
>
> 1. If metal pads are beneath PhotoResist and metal gets exposed for
> one or two minutes to Oxygen plasma, what can be the side effects.
>
> STS has strictly told that metal should not be exposed in Chamber to
> avoid micro masking related issues/ chamber contamination.
>
>
> I will like to know if any body is using DRIE chamber for photoresist
> ashing, and if so, have they faced any problems related to chamber
> contamination.
>
> Metals likely to get exposed are: Aluminium , Gold

--
Dr. Alexandre BOE
Post-doctoral researcher

Université Catholique de Louvain

FSA/ELEC/EMIC - Laboratoire d'hyperfréquences

Bâtiment Maxwell b.207
Place du Levant, 3
B-1348 Louvain-la-Neuve
Belgium

alexandre.boe@uclouvain.be
Tel.  +32 10 478 106
Fax   +32 10 478 705