Ashwini, Because RIE is a much higher energy than amorphous plasma you can get problems. One would be sputtering of any exposed metal which could coat the chamber walls and redeposit later. A second could be aggressive etching of the exposed surfaces using the aluminum as a mask. If you are only using Oxygen this should be a low level problem. Bill Moffat -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of Alexandre BOE Sent: Monday, July 06, 2009 8:58 AM To: General MEMS discussion Subject: Re: [mems-talk] Using DRIE chamber for Photoresist Ashing Dear Ashwini, I have previously etched some silicon wafer using DRIE in a STS tool with some metal exposed just at the end of the etching, perhaps about 1 min. I always performed a cleaning just after this step (O2 plasma and sometimes manually) and we have never reported any difference. I have also seen people using aluminium as a hard mask for DRIE ... Regards, Alex