Try 10nm of Cr as an intermediate layer between Ni and Si.

Cheers,

Marcel


Quoting Salam Gabran :

> Hi Guys,
>
> I am trying to sputter deposit Ni on Si followed by annealing at a different
> temperature (350, 450 degreesC). The nickel is 30nm and 200nm.
> During annealing, the Ni film peals off, it should be due to thermal
> stresses during deposition.
>
> Any clue how this can be resolved ?
>
> kind regards
>
> Salam R. Gabran, MASc.
> Research associate, PhD. Candidate
> Center for Integrated RF Engineering
> (CIRFE) Group
> ECE Dept., University of Waterloo