Salam,

I think you should be forming Ni silicide at the annealing temperatures you
state and the Ni should stick well.  There may be a problem with the some
contaminant at the Ni/Si interface.  In some sputter tools you can backsputter
with Ar to clean the Si surface, or you may need to do an O2 plasma descum
and/or HF clean first.

Pat


-----Original Message-----
From: mems-talk-bounces+gwatson=princeton.edu@memsnet.org [mailto:mems-talk-
bounces+gwatson=princeton.edu@memsnet.org] On Behalf Of Denis Petrov
Sent: Wednesday, September 15, 2010 8:55 AM
To: General MEMS discussion
Subject: Re: [mems-talk] Ni adhesion to Si

Hi!

Ni has bad adhesion to Cr but good to gold. So, you could try to
sputter first say 15 nm of Cr followed by 80 nm of Gold. And then your
Ni.

Regards,

Denis