Hi,

Thanks for reply. I try not to go with wet etching to avoid undercut issue since
the photoresist mask patterns are closely packed and "um" target thickness to be
etched into alumina.

Caleb

________________________________
 From: Kirt Williams 
To: 'General MEMS discussion' 
Sent: Thursday, March 8, 2012 2:37 PM
Subject: RE: [mems-talk] Dry Etch Al2O3 with photoresist mask

Try wet etching it in 5:1 BHF or a similar HF solution.

   --Kirt Williams


-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
On Behalf Of Sherman GUO
Sent: Thursday, March 08, 2012 8:42 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Dry Etch Al2O3 with photoresist mask

Hi, group,


I have been trying to do dry etching on Alumina (grown by e-beam
evaporation) with mask of photoresist (OiR908) . Gas agents are BCl3(6) and
Ar(14). The problem is the selectivity is 3:1 PR:Al2O3, which requires
extremely thick resist for targeting ~um thick Alumina etching. Is there any
other dry etching recipe for selective etching alumina over photoresist?

Any help will be highly appreciated.

Best Regards,
Caleb Guo
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