Hi fellows

Recently we developed recipe for Al dry etch with PMMA PR mask, in BCl3:Ar=5:1
plasma Al etch rate was relatively low, for increasing Al etch rate and Al:PR
selectivity we used Cl2:BCl3:Ar=10:5:1 gas mixture, Al etch rate increased in
order of magnitude, while PR etch rate still the same.

 Kind regards Osipov K.
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