Here's link to data sheet:
http://www.microchem.com/pdf/SU-8%203000%20Data%20Sheet.pdf
Should cut your cd no problem. If you want to strip it use omnicat first.
Also there are lower concentrations available, so you can have a layer down
to 100nm off the bottle.
On Mar 9, 2012 10:20 AM, "Caleb Guo"  wrote:

> I have no experience on using SU-8. I know it can be really thick, but how
> fine the feature can be? Our pattern is 1um size with 2um period.
> Also, I heard that it is not easy to be stripped off.
>
> Caleb Guo
>
>
> ________________________________
>  From: Lukasz Urbanski 
> To: General MEMS discussion 
> Sent: Friday, March 9, 2012 7:56 AM
> Subject: Re: [mems-talk] Dry Etch Al2O3 with photoresist mask
>
> Try su8 resist, it's pretty inert to etching.
> -
> Lukasz Urbanski
> On Mar 8, 2012 5:26 PM, "Bill Moffat" 
> wrote:
>
> > Why not try lift off.  Dimensions below 0.1 micron resist thicknesses up
> > to 40 microns.  Bill Moffat
> >
> > -----Original Message-----
> > From: mems-talk-bounces@memsnet.org [mailto:
> mems-talk-bounces@memsnet.org]
> > On Behalf Of Robert Ditizio
> > Sent: Thursday, March 08, 2012 2:01 PM
> > To: Sherman GUO; General MEMS discussion
> > Subject: Re: [mems-talk] Dry Etch Al2O3 with photoresist mask
> >
> > Alumina is a tough film to etch, particularly with a PR mask.  Your
> choice
> > of chemistry would have been my first choice as well.  One aspect of the
> > etch that you might consider is to keep the wafer temperature as low as
> > possible during the etch to minimize the PR etch rate. I have gone as low
> > as -40C with little impact on alumina etch rate.
> >
> > Robert
> >
> > -----Original Message-----
> > From: mems-talk-bounces@memsnet.org [mailto:
> mems-talk-bounces@memsnet.org]
> > On Behalf Of Sherman GUO
> > Sent: Thursday, March 08, 2012 8:42 AM
> > To: mems-talk@memsnet.org
> > Subject: [mems-talk] Dry Etch Al2O3 with photoresist mask
> >
> > Hi, group,
> >
> >
> > I have been trying to do dry etching on Alumina (grown by e-beam
> > evaporation) with mask of photoresist (OiR908) . Gas agents are BCl3(6)
> and
> > Ar(14). The problem is the selectivity is 3:1 PR:Al2O3, which requires
> > extremely thick resist for targeting ~um thick Alumina etching. Is there
> > any other dry etching recipe for selective etching alumina over
> photoresist?
> >
> > Any help will be highly appreciated.
> >
> > Best Regards,
> > Caleb Guo
> > _______________________________________________
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