I'm trying to remove the aluminum layer (5000A, sputtered) that was used as
a hard mask for DRIE for structure release and having difficulty removing
it completely using the Al etchant (Al-12S).  There are residues left on
the surface (SiO2) that look like small grains, even after leaving the
wafer on the ethant (more than 1 hr). After a short-dip on BOE (~30s) and
putting in the etchant, the residues are reduced but still not completely
clean.

Anyone has an idea to completely remove these residues or has the same
experience? I don't quite understand why BOE helepd since shouldn't
aluminum oxide be only on the surface, not throughout the Al thin-film?

Thanks!!!
-Jenn
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