durusmail: mems-talk: Remove aluminum mask after DRIE
Remove aluminum mask after DRIE
2013-05-06
2013-05-08
2013-05-08
2013-05-08
2013-05-08
Remove aluminum mask after DRIE
Robert Ditizio
2013-05-08
Jenn:

The difficulty that you are having with the removal of the aluminum is likely to
be due to a residue layer that forms on the aluminum surface as a result of an
interaction between the aluminum and the fluorine in the gas chemistry.  This
residue layer is not likely to be etchable in the aluminum etchant. In the best
case, this residue layer can be removed with a brief oxygen plasma exposure
prior to the aluminum etch.  Worst case, the residue layer may require a sputter
etch or a combination of an oxygen strip and a sputter etch to clean up the
surface prior to the aluminum etch.

Regards,
Robert


-----Original Message-----
From: mems-talk-bounces+rditizio=tegal.com@memsnet.org [mailto:mems-talk-
bounces+rditizio=tegal.com@memsnet.org] On Behalf Of HJ Rhee
Sent: Saturday, May 04, 2013 11:00 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Remove aluminum mask after DRIE

I'm trying to remove the aluminum layer (5000A, sputtered) that was used as
a hard mask for DRIE for structure release and having difficulty removing
it completely using the Al etchant (Al-12S).  There are residues left on
the surface (SiO2) that look like small grains, even after leaving the
wafer on the ethant (more than 1 hr). After a short-dip on BOE (~30s) and
putting in the etchant, the residues are reduced but still not completely
clean.

Anyone has an idea to completely remove these residues or has the same
experience? I don't quite understand why BOE helepd since shouldn't
aluminum oxide be only on the surface, not throughout the Al thin-film?

Thanks!!!
-Jenn
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