Hi Jen, It might help to do a somewhat aggressive oxygen plasma clean of your sample in the DRIE to help remove telflon-like polymer from the wafer surface. Cleaning after DRIE, in general can be quite challenging. Cheers, Michael On Sun, May 5, 2013 at 1:59 AM, HJ Rheewrote: > I'm trying to remove the aluminum layer (5000A, sputtered) that was used as > a hard mask for DRIE for structure release and having difficulty removing > it completely using the Al etchant (Al-12S). There are residues left on > the surface (SiO2) that look like small grains, even after leaving the > wafer on the ethant (more than 1 hr). After a short-dip on BOE (~30s) and > putting in the etchant, the residues are reduced but still not completely > clean. > > Anyone has an idea to completely remove these residues or has the same > experience? I don't quite understand why BOE helepd since shouldn't > aluminum oxide be only on the surface, not throughout the Al thin-film? > > Thanks!!! > -Jenn > _______________________________________________ > Hosted by the MEMS and Nanotechnology Exchange, the country's leading > provider of MEMS and Nanotechnology design and fabrication services. > Visit us at http://www.mems-exchange.org > > Want to advertise to this community? See http://www.memsnet.org > > To unsubscribe: > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk