O2 and CF4 are too abrasive, find some other molecule for your solution.


On Wed, Jul 23, 2014 at 5:09 PM, Sophie Roman 
wrote:

> Hi Sebastian,
> I've seen similar problem with RIE and I think you can try to glue your
> wafer, to prevent it overheating.
>
> Best,
>
> Sophie
>
>
> Postdoc, Stanford University
> Energy Resources Engineering Department
>
>
>
>
>
> 2014-07-23 8:00 GMT-07:00 Sebastian R Freeman :
>
> > Hi everyone,
> >
> > I am etching a 4-inch silicon wafer in the RIE using O2, and CF4, in
> > combination. Using positive photoresist, my goal is to create an array of
> > silicon pillars covering the surface of the wafer. I am trying to push
> the
> > limits of the machine, and trying to etch several microns. I etched for 5
> > minutes and was able to get 1.5 micron tall pillars, the wafer came out
> of
> > the machine very dirty, with a film-like residue on it, and looking very
> > scratched up. I think I might have an idea of what this is, but I would
> > appreciate anyone else's input, or a way to prevent it.
> >
> > *Sebastian Freeman*
> > *Ph.D Student*
> >
> > *Binghamton University *
> >
> > *Thomas J. Watson School of Engineering*
> > *Department of Bioengineering*
> > *Office: Biotechnology Building 2629*
> > *E-mail: sfreema1@binghamton.edu *
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