Too much polymer, try to reduce O2?

-----Original Message-----
From: mems-talk-bounces+lillianyan=amecnsh.com@memsnet.org [mailto:mems-talk-
bounces+lillianyan=amecnsh.com@memsnet.org] On Behalf Of Deep Mukhopadhyay
Sent: 2014年7月24日 3:20
To: 'General MEMS discussion'
Subject: Re: [mems-talk] RIE Silicon etching

Teflon-like compound? Can you reduce your loading factor?


-----Original Message-----
From: mems-talk-bounces+deepkishore=yahoo.com@memsnet.org
[mailto:mems-talk-bounces+deepkishore=yahoo.com@memsnet.org] On Behalf Of
Sebastian R Freeman
Sent: Wednesday, July 23, 2014 8:01 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] RIE Silicon etching

Hi everyone,

I am etching a 4-inch silicon wafer in the RIE using O2, and CF4, in
combination. Using positive photoresist, my goal is to create an array of
silicon pillars covering the surface of the wafer. I am trying to push the
limits of the machine, and trying to etch several microns. I etched for 5
minutes and was able to get 1.5 micron tall pillars, the wafer came out of the
machine very dirty, with a film-like residue on it, and looking very scratched
up. I think I might have an idea of what this is, but I would appreciate anyone
else's input, or a way to prevent it.

*Sebastian Freeman*
*Ph.D Student*

*Binghamton University *

*Thomas J. Watson School of Engineering* *Department of Bioengineering*
*Office: Biotechnology Building 2629*
*E-mail: sfreema1@binghamton.edu *
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