Hello,

I want to deposit and pattern a thin layer of tin (~1um thick) on an
unpatterned layer of copper oxide that is attached to thermal oxide on a
silicon wafer with an adhesion layer of titanium.  I plan to deposit the
titanium and copper layers in our E-beam deposition system without breaking
the vacuum, and then oxidize the thin copper layer in a high humidity
chamber at ~90C for several hours.  I would then deposit the tin layer in
the E-beam system.  I have reservations about the adhesion between the
copper oxide and the tin.  If anyone has any comments or suggestions, I
would like to hear them.  Thank you.

Sincerely,

Robert Dean

Research Associate IV
Center for Advanced Vehicle Electronics
Auburn University
200 Broun Hall
Auburn, AL 36849

Voice: 334-844-1838
Fax:   334-844-1898
Email: rdean@eng.auburn.edu