Hi, Alaa

Thanks for the suggestions. I guess for my sample, the Ni film
directly contact with the photoresist layer, and from the SEM picture
shown in the link of my last post, the photoresist layer seems to be
under big strain, and peeled off from the substrate (but still under
the nickel layer). The wafer itself seems ok with nickel on it.

 When referring to anneal the wafer, do you mean hard bake? I have
tried hard bake at 130C before deposition, but the same problem
remains. Could you specify a little bit more on wafer annealing?

Thanks,

Wei

> ---------- 已转发邮件 ----------
> From: "A.ALLOUCH" 
> To: General MEMS discussion 
> Date: Fri, 26 Feb 2010 16:27:18 +0100
> Subject: Re: [mems-talk] photoresist peeled off during Ni e-beam deposition
> Hi,
>
> Maybe you must deposit the Ni film on the both sides of your wafer? This
decreases a lot the stress.
>
> You can also anneal your wafer before deposition.
>
> Alaa

--
Wei Tang
Department of Materials Science and Engineering, UCLA
Cell: 310-357-0158
Website: http://tangweipku.googlepages.com