Hello all,
I deposit a 250 nm PECVD SiN layer as the dielectric between two gold layers and
the metal layers seem to be short through the nitride each time. I increased the
nitride thickness to 400 nm and still the same. I gathered that PECVD nitride is
quite notorious for the pinholes so I multi-layered the nitride (6 times of 40
nm each) to get rid of pinholes. It worked only on 1 wafer and then the same
problem again. So I appreciate any comments on this and whether you think
changing the dielectric is a good option.

Thank you,
Nahid
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk