durusmail: mems-talk: Silicon Nitride shorting metal layers
Silicon Nitride shorting metal layers
2013-04-29
2013-04-30
2013-04-30
2013-04-30
2013-04-30
Silicon Nitride shorting metal layers
basar bolukbas
2013-04-30
Dear Nahid

Due to my experiences, your main problem is pinholes.If you have still pinholes
even you increase your thickness, this means that your pinholes are quite big
and deep.So I recommend you that change your deposition parameters like RF Power
and Deposition/Growth Pressure.Process Temperature has a big role about pinholes
density also.You can easily find some details about Process Parameters vs
Pinholes in the literature.If you can't I'll try to share with you.By the way I
don't recommend to change your dielectric layer as your process seems to me like
a capacitor structure.When you start to change your SiN process details a little
bit, I believe you will find a good point.I would also ask your metal layers
thickness?This can be another problem if your metal thickness is so too much
relative to SiN.
I hope this can help you.Regards.
---

> Date: Mon, 29 Apr 2013 15:49:27 -0700
> From: nahid.vahabi@yahoo.com
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Silicon Nitride shorting metal layers
>
> Hello all,
> I deposit a 250 nm PECVD SiN layer as the dielectric between two gold layers
and the metal layers seem to be short through the nitride each time. I increased
the nitride thickness to 400 nm and still the same. I gathered that PECVD
nitride is quite notorious for the pinholes so I multi-layered the nitride (6
times of 40 nm each) to get rid of pinholes. It worked only on 1 wafer and then
the same problem again. So I appreciate any comments on this and whether you
think changing the dielectric is a good option.
>
> Thank you,
> Nahid
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