durusmail: mems-talk: SU8 2075 Pattern - Reg:
SU8 2075 Pattern - Reg:
2015-06-25
2015-06-30
2015-07-01
KarthiKeyan K (2 parts)
2015-07-01
Black, Robert (2 parts)
2015-06-30
2015-07-01
KarthiKeyan K (2 parts)
2015-07-01
Daniel Figura (2 parts)
2015-06-30
KarthiKeyan K (2 parts)
SU8 2075 Pattern - Reg:
KarthiKeyan K
2015-07-01
Dear Sir,

I have change my exposure timing from 25-45sec with different thickness of
SU8 layer such as 80 -140
 micro meter thickness.

What to you mean by bias difference b/w mask vs wafer?? because we did not
apply any bias b/w mask & wafer.

we are applying full intensity of UV light on SU8 layer and the wave length
of UV is 365 nm.

Can you tell me how to calculate exposure time for different thickness of
SU8 2075 layer.??

Looking forward to your reply.

Best Regards,
Karthikeyan K



On Mon, Jun 29, 2015 at 8:42 PM, Black, Robert  wrote:

> It is typical that you will have a bias difference between what is in the
> mask vs. wafer. How much depends on your process. Can you change exposure?
>
> Robert
>
> -----Original Message-----
> From: mems-talk-bounces+r-black1=ti.com@memsnet.org [mailto:
> mems-talk-bounces+r-black1=ti.com@memsnet.org] On Behalf Of KarthiKeyan K
> Sent: Wednesday, June 24, 2015 10:05 PM
> To: General MEMS discussion
> Subject: [mems-talk] SU8 2075 Pattern - Reg:
>
> ​Dear Friends,
>
> Actually i am working in SU8 2075 negative ​photoresist and am facing to
> achieve exact size of mask pattern on my SU8 photoresist for the example my
> mask pattern size is 50 micro meter means i have achieved 60 micro meter.
>
>
> So Please suggest how to get exact size of the mask pattern on my SU8
> Photoresist layer??? any parameter to get exact size of the mask pattern on
> my SU8 Photoresist.??
>
> Looking forward to your suggestions.
>
> Thanking you,
>
> Best Regards,
> Karthi
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