durusmail: mems-talk: About difficulty in photoresist development (if using HMDS as adhesion layer)
About difficulty in photoresist development (if using HMDS as adhesion layer)
2015-09-23
About difficulty in photoresist development (if using HMDS as adhesion layer)
2015-09-24
About difficulty in photoresist development (if using HMDS as adhesion layer)
About difficulty in photoresist development (if using HMDS as adhesion layer)
2015-09-24
About difficulty in photoresist development (if using HMDS as adhesion layer)
About difficulty in photoresist development (if using HMDS as adhesion layer)
2015-09-29
2015-09-30
2015-10-04
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2016-01-04
2015-09-25
About difficulty in photoresist development (if using HMDS as adhesion layer)
Mehmet Yilmaz
2015-09-23
Dear mems-talk community,
If I use HMDS as adhesion layer, I am having a problem with the development
of a photoresist called AZ4562 (about 10 micron thickness). In addition, I
am having the same development problem with AZ5214E (about 1.4 micron
thickness).

If I do not use HMDS, the development time is usually about 60 seconds, or
even less. However, if I use HMDS, the development time goes up to 45
minutes (not seconds...) and still the development is not successful, but
the resist is completely removed from some parts of the patterned areas on
the wafer.

Also, I have seen this problem with different substrates such as Silicon,
Quartz, and Pyrex.

I am wondering what would be the reason for that? Is it possible that HMDS
is old, and out of date? Could that explain the problem? Or, do you have
any other comments based on your own experience? Could you please comment?

I am looking forward to your replies.

Thanks in advance,

Mehmet

Mechanical Engineer
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